? semiconductor components industries, llc, 2014 november, 2014 ? rev. 0 1 publication order number: ngtb40n120sw/d NGTB40N120SWG igbt - inverter welding this insulated gate bipolar transistor (igbt) features a robust and cost effective trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. the igbt is well suited for welding applications. incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage. features ? t jmax = 175 c ? soft fast reverse recovery diode ? optimized for high speed switching ? 10 s short circuit capability ? these are pb?free devices typical applications ? welding absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 80 40 a pulsed collector current, t pulse limited by t jmax i cm 200 a diode forward current @ t c = 25 c @ t c = 100 c i f 80 40 a diode pulsed current, t pulse limited by t jmax i fm 200 a gate?emitter voltage transient gate?emitter voltage (t pulse = 5 s, d < 0.10) v ge 20 30 v power dissipation @ t c = 25 c @ t c = 100 c p d 535 267 w short circuit withstand time v ge = 15 v, v ce = 500 v, t j 150 c t sc 10 s operating junction temperature range t j ?55 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. to?247 case 340al c g 40 a, 1200 v v cesat = 2.0 v e off = 1.10 mj e device package shipping ordering information NGTB40N120SWG t o?247 (pb?free) 30 units / ra il http://onsemi.com a = assembly location y = year ww = work week g = pb?free package marking diagram 40n120s aywwg g e c
NGTB40N120SWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.28 c/w thermal resistance junction?to?case, for diode r jc 0.5 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 40 a v ge = 15 v, i c = 40 a, t j = 175 c v cesat ? ? 2.00 2.40 2.40 ? v gate?emitter threshold voltage v ge = v ce , i c = 400 a v ge(th) 4.5 5.5 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 175 c i ces ? ? ? ? 0.1 2 ma gate leakage current, collector?emitter short?circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 7385 ? pf output capacitance c oes ? 230 ? reverse transfer capacitance c res ? 140 ? gate charge total v ce = 600 v, i c = 40 a, v ge = 15 v q g ? 313 ? nc gate to emitter charge q ge ? 61 ? gate to collector charge q gc ? 151 ? switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 600 v, i c = 40 a r g = 10 v ge = 0 v/ 15v t d(on) ? 116 ? ns rise time t r ? 42 ? turn?off delay time t d(off) ? 286 ? fall time t f ? 121 ? turn?on switching loss e on ? 3.4 ? mj turn?off switching loss e off ? 1.1 ? total switching loss e ts ? 4.5 ? turn?on delay time t j = 175 c v cc = 600 v, i c = 40 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 111 ? ns rise time t r ? 43 ? turn?off delay time t d(off) ? 304 ? fall time t f ? 260 ? turn?on switching loss e on ? 4.4 ? mj turn?off switching loss e off ? 2.5 ? total switching loss e ts ? 6.9 ? diode characteristic forward voltage v ge = 0 v, i f = 40 a v ge = 0 v, i f = 50 a, t j = 175 c v f ? ? 2.00 2.30 2.60 ? v reverse recovery time t j = 25 c i f = 40 a, v r = 400 v di f /dt = 200 a/ s t rr ? 240 ? ns reverse recovery charge q rr ? 2.5 ? c reverse recovery current i rrm ? 18 ? a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB40N120SWG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 8 6 5 4 3 2 1 0 160 figure 3. typical capacitance figure 4. diode forward characteristics figure 5. typical gate charge i c , collector current (a) 7 v ge = 20 v to 13 v t j = 25 c 9 v 8 v 7 v 8 6 5 4 3 2 1 160 i c , collector current (a) 7 t j = 150 c 9 v 8 v 7 v v ge = 20 v to 13 v figure 6. switching loss vs. i c v ce , collector?emitter voltage (v) 90 80 50 40 30 20 10 0 100000 c, capacitance (pf) 100 c ies c oes c res 70 60 10 v 11 v 140 120 100 80 60 40 20 0 10 v 11 v 140 120 100 80 60 40 20 0 t j = 25 c 10000 1000 100 10 1 v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 70 i f , forward current (a) t j = 25 c t j = 150 c 60 50 40 30 20 10 0 3.5 4 .0 q g , gate charge (nc) 150 100 50 0 0 2 4 6 8 12 14 16 v ge , gate?emitter voltage (v) 200 10 v ce = 600 v v ce = 600 v v ge = 15 v i c = 40 a 250 300 350 i c , collector current (a) 45 35 25 15 5 12 switching loss (mj) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 e off e on 10 8 6 4 2 0 55 65 75 8 5
NGTB40N120SWG http://onsemi.com 4 typical characteristics figure 7. switching time vs. i c figure 8. safe operating area i c , collector current (a) 100 1000 switching time (ns) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 t r t d(on) t f t d(off) 45 35 25 15 555657585 10 v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.01 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 10000 figure 9. igbt transient thermal impedance on?pulse width (s) 1 0.1 0.01 0.0001 1e?06 1 square?wave peak r(t) ( c/w) 1e?05 50% duty cycle 20% 10% 5% 2% single pulse r jc = 0.28 junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.1 0.01 0.001 0.0001 0.001 r i ( c/w) c i (j/ c) 0.048747 0.006487 0.043252 0.051703 0.107932 0.025253 0.023120 0.061163 0.092651 1.252250 figure 10. diode transient thermal impedance on?pulse width (s) square?wave peak r(t) ( c/w) 50% duty cycle 20% 10% 5% 2% single pulse 0.001 0.01 0.1 1 r jc = 0.50 junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n 1 0.1 0.01 0.0001 1e?06 1e?05 0.001 r i ( c/w) c i (j/ c) 0.007703 0.000130 0.010613 0.010097 0.032329 0.046791 0.044179 0.083870 0.044938 0.217376 0.000942 0.003132 0.003093 0.006758 0.022635 0.119232 0.703706 0.460033
NGTB40N120SWG http://onsemi.com 5 package dimensions to?247 case 340al issue a e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.30 21.40 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.50 4.50 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb40n120sw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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